REVIEW - DRY ETCHING OF SILICON-OXIDE

被引：34

作者：

VANROOSMALEN, AJ

机构：

来源：

VACUUM | 1984年 / 34卷 / 3-4期

关键词：

D O I：

10.1016/0042-207X(84)90079-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：429 / 436

页数：8

共 68 条

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[2]

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[4]

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[6] THE IMPLICATION OF FLOW-RATE DEPENDENCIES IN PLASMA-ETCHING [J].

CHAPMAN, BN ;

HANSEN, TA ;

MINKIEWICZ, VJ .

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[7] REACTIVE ION ETCHING FOR SUB-MICRON STRUCTURES [J].

CHINN, JD ;

ADESIDA, I ;

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[8]

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[9] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J].

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[10] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J].

COBURN, JW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5210-5213

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