COMPARISON OF RAPID THERMAL ANNEALING AND CONTROLLED-ATMOSPHERE ANNEALING OF ION-IMPLANTED GAAS

被引：1

作者：

KANBER, H

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 24-5卷

关键词：

D O I：

10.1016/0168-583X(87)90712-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：575 / 580

页数：6

共 19 条

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[4]

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[7] HIGH-EFFICIENCY GAAS POWER MESFETS PREPARED BY ION-IMPLANTATION [J].

FENG, M ;

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[8] CORRELATION BETWEEN CHEMICAL AND ELECTRICAL PROFILES IN SI+, SE+ AND S+ IMPLANTED BULK AND EPITAXIAL GAAS [J].

KANBER, H ;

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EU, VK ;

RUSH, RC ;

HENDERSON, WB .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) :1083-1114

[9]

KANBER H, 1984, 1983 MRS S ION IMPL, V17, P365

[10]

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