MESFET FABRICATION AND HALL-MOBILITY MEASUREMENTS IN LPE-GROWN INXGA1-XP LAYERS LATTICE-MATCHED TO GAAS

被引：1

作者：

JOHNSON, RH ^{[1
]}

WEICHOLD, MH ^{[1
]}

机构：

[1] TEXAS A&M UNIV,INST SOLID STATE ELECTR,DEPT ELECT ENGN,COLLEGE STN,TX 77843

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 08期

关键词：

D O I：

10.1016/0038-1101(86)90185-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：825 / 828

页数：4

共 16 条

[1]

ARSENTEV IN, 1980, SOV PHYS SEMICOND+, V14, P1389

[2] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (001), (111)A, AND (111)B GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) :67-74

[3] YELLOW-GREEN IN1-XGAXP AND IN1-XGAXP1-ZASZ LEDS AND ELECTRON-BEAM-PUMPED LASERS PREPARED BY LPE AND VPE [J].

ERMAKOV, ON ;

GARBA, LS ;

GOLOVANOV, YA ;

SUSHKOV, VP ;

CHUKICHEV, MV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (08) :1190-1193

[4] SINGLE-STEP OPTICAL LIFT-OFF PROCESS [J].

HATZAKIS, M ;

CANAVELLO, BJ ;

SHAW, JM .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) :452-460

[5] GAMMA-GAMMA AND GAMMA-X TRANSITIONS OF GAXIN1-XP ALLOYS [J].

JOULLIE, AM ;

ALIBERT, C .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5472-5474

[6] ELECTRON AND HOLE CARRIER MOBILITIES FOR LIQUID-PHASE EPITAXIALLY GROWN GAP IN THE TEMPERATURE-RANGE 200-K-550-K [J].

KAO, YC ;

EKNOYAN, O .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2468-2471

[7] TEMPERATURE-DEPENDENCE OF CARRIER CONCENTRATION, RESISTIVITY, AND HALL-MOBILITY IN TE-DOPED IN1-XGAXP [J].

KATO, T ;

SHIMIZU, A ;

ISHIDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) :1669-1670

[8] HALL-MOBILITY OF TE-DOPED IN1-XGAXP AT 300 K [J].

KATO, T ;

SHIMIZU, A ;

ISHIDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) :1481-1482

[9] ORIENTATION DEPENDENCE OF LPE GROWTH-BEHAVIOR OF GAXIN1-XP ON (100) AND (111)B GAAS SUBSTRATES [J].

KUME, M ;

OHTA, J ;

OGASAWARA, N ;

ITO, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (07) :L424-L426

[10] ABOUT BAND-STRUCTURE OF GAXIN1-XP ALLOYS [J].

LAUGIER, A ;

CHEVALLIER, J .

SOLID STATE COMMUNICATIONS, 1972, 10 (04) :353-+

← 1 2 →