INTERACTION OF GOLD, PALLADIUM AND AU-PD ALLOY DEPOSITS WITH OXIDIZED SI(100) SUBSTRATES

被引:13
作者
ANTON, R
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D O I
10.1016/0040-6090(84)90244-X
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T [工业技术];
学科分类号
08 ;
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页码:293 / 311
页数:19
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共 30 条
[21]   FORMATION KINETICS OF CRSI2 FILMS ON SI SUBSTRATES WITH AND WITHOUT INTERPOSED PD2SI LAYER [J].
OLOWOLAFE, JO ;
NICOLET, MA ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5182-5186
[22]   STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE - AN INVESTIGATION BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
OUSTRY, A ;
BERTY, J ;
CAUMONT, M ;
DAVID, MJ ;
ESCAUT, A .
THIN SOLID FILMS, 1982, 97 (04) :295-300
[23]  
Poate J M, 1978, THIN FILMS INTERDIFF
[24]   REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES [J].
PRETORIUS, R ;
HARRIS, JM ;
NICOLET, MA .
SOLID-STATE ELECTRONICS, 1978, 21 (04) :667-&
[26]   MARKER STUDIES OF SILICIDE FORMATION, SILICON SELF-DIFFUSION AND SILICON EPITAXY USING RADIOACTIVE SILICON AND RUTHERFORD BACKSCATTERING [J].
PRETORIUS, R ;
RAMILLER, CL ;
NICOLET, MA .
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :629-633
[27]   DYNAMICS OF METAL-SIOX AND SIOX-SI INTERFACES AND THE ASSOCIATED INSTABILITIES IN PRACTICAL METAL-INSULATOR SEMICONDUCTOR STRUCTURES [J].
RAJESWARAN, G ;
ANDERSON, WA ;
JACKSON, M ;
THAYER, M .
THIN SOLID FILMS, 1983, 104 (3-4) :351-359
[28]  
SALVAN F, 1980, J PHYS LETT PARIS, V41, P337
[29]   THE EFFECTS OF INTERFACIAL SIO2 ON PD2SI FORMATION [J].
SCOTT, DM ;
LAU, SS ;
PFEFFER, RL ;
LUX, RA ;
MIKKELSON, J ;
WIELUNSKI, L ;
NICOLET, MA .
THIN SOLID FILMS, 1983, 104 (1-2) :227-233
[30]  
Tu K.N., 1974, J APPL PHYS S, V2, P669