HETEROEPITAXY OF GAAS ON SI AND GE USING ALTERNATING, LOW-ENERGY ION-BEAMS

被引:20
作者
HAYNES, TE
ZUHR, RA
PENNYCOOK, SJ
APPLETON, BR
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D O I
10.1063/1.100690
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O59 [应用物理学];
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页码:1439 / 1441
页数:3
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