BAND-TO-BAND AUGER RECOMBINATION IN SEMICONDUCTORS

被引：61

作者：

HAUG, A ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,HEISENBERGSTR 1,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1988年 / 49卷 / 06期

关键词：

D O I：

10.1016/0022-3697(88)90190-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Semiconductor Materials

引用

页码：599 / 605

页数：7

共 81 条

[61] RECOMBINATION MECHANISMS AND DOPING DENSITY IN SILICON
PASSARI, L
SUSI, E
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3935 - 3937
[62] PHOTO-EXCITED CARRIER LIFETIME AND AUGER RECOMBINATION IN 1.3-MU-M INGAASP
SERMAGE, B
EICHLER, HJ
HERITAGE, JP
NELSON, RJ
DUTTA, NK
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 259 - 261
[63] AUGER RECOMBINATION IN A QUANTUM WELL HETEROSTRUCTURE
SMITH, C
ABRAM, RA
BURT, MG
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (05): : L171 - L175
[64] THEORY OF AUGER RECOMBINATION IN A QUANTUM WELL HETEROSTRUCTURE
SMITH, C
ABRAM, RA
BURT, MG
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (02) : 119 - 123
[65] BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
SUGIMURA, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 627 - 635
[66] AUGER RECOMBINATION EFFECT ON THRESHOLD CURRENT OF INGAASP QUANTUM WELL LASERS
SUGIMURA, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 932 - 941
[67] THEORY OF THERMAL-BEHAVIOR OF LASER OPERATION IN IN0.53GA0.47AS
TAKESHIMA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) : 49 - 56
[68] ENHANCEMENT OF AUGER RECOMBINATION IN SEMICONDUCTORS BY ELECTRON-HOLE PLASMA INTERACTIONS
TAKESHIMA, M
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 2039 - 2048
[69] ROLE OF DIELECTRIC SCREENING IN AUGER RECOMBINATION IN SEMICONDUCTORS
TAKESHIMA, M
[J]. PHYSICAL REVIEW B, 1982, 26 (06): : 3192 - 3202
[70] EFFECT OF ANISOTROPIC BAND PARAMETERS ON BAND-TO-BAND AUGER RECOMBINATION IN IN0.72GA0.28AS0.6P0.4
TAKESHIMA, M
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 1993 - 2001

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