ON THE GETTERING EFFICIENCY OF CRYSTAL DEFECTS IN SILICON

被引：9

作者：

BUGIEL, E

KITTLER, M

BORCHARDT, A

RICHTER, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 84卷 / 01期

关键词：

D O I：

10.1002/pssa.2210840117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：143 / 147

页数：5

共 12 条

[1]

BUGIEL E, 1982, 2 P S PHYS GRUNDL BE, P795

[2]

FUTAGAMI M, 1981, J APPL PHYS, V52, P1581

[3]

HEYDENREICH J, 1981, SCANNING ELECTRON MI, V1, P351

[4] ON THE SENSITIVITY OF THE EBIC TECHNIQUE AS APPLIED TO DEFECT INVESTIGATIONS IN SILICON [J].

KITTLER, M ;

SEIFERT, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02) :573-583

[5] EBIC TEM STUDIES ON THE RELATION BETWEEN ELECTRICAL-PROPERTIES, CRYSTALLOGRAPHIC STRUCTURE, AND INTERACTION WITH POINT-DEFECTS OF EPITAXIAL STACKING-FAULTS IN SILICON [J].

KITTLER, M ;

BUGIEL, E .

CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (01) :79-89

[6] DETERMINATION OF SEMICONDUCTOR PARAMETERS AND OF THE VERTICAL STRUCTURE OF DEVICES BY NUMERICAL-ANALYSIS OF ENERGY-DEPENDENT EBIC MEASUREMENTS [J].

KITTLER, M ;

SCHRODER, KW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (01) :139-151

[7] QUANTITATIVE EBIC INVESTIGATIONS ON BULK STACKING-FAULTS IN SILICON [J].

KITTLER, M ;

SCHRODER, KW ;

BUGIEL, E ;

BECKER, C .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (02) :K131-&

[8] THE INFLUENCE OF GAS-PHASE ETCH REMOVAL, DEPOSITION TEMPERATURE AND SUBSTRATE PROPERTIES ON THE CRYSTALLOGRAPHIC PERFECTION OF SILICON EPITAXIAL LAYERS [J].

RICHTER, F ;

WEIDNER, G ;

BORCHARDT, A ;

BUGIEL, E ;

KITTLER, M ;

SCHMALZ, K ;

WEIDNER, M ;

RAUSCH, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (12) :1521-1531

[9] DEFECT ENGINEERING AS AN IMPORTANT FACTOR IN DEVELOPING VLSI SUBSTRATES [J].

RICHTER, H ;

MAI, M ;

KIRSCHT, FG ;

GAWORZEWSKI, P .

PHYSICA B & C, 1983, 116 (1-3) :162-167

[10] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS [J].

ROZGONYI, GA ;

DEYSHER, RP ;

PEARCE, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1910-1915

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