EFFECT OF CARBON ON OXYGEN PRECIPITATION IN SILICON

被引：50

作者：

SUN, Q ^{[1
]}

YAO, KH ^{[1
]}

LAGOWSKI, J ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.344947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic Fourier-transformed infrared-spectroscopy study of oxygen and carbon in isolated form and as complexes in the silicon lattice has revealed a direct correlation between the decrease of substitutional carbon concentration and the decrease of interstitial oxygen concentration during 750°C annealing. At a concentration exceeding 2 ppma, carbon was also found to enhance oxide precipitate growth. After completing a three-step annealing (1100°C+750°C+1000°C), an oxide-precipitate-related IR-absorption band was observed. The changes of the IR-absorption band were correlated with annealing-induced changes in the state of carbon. A direct incorporation of carbon into oxide precipitates, and/or carbon interaction with silicon self-interstitials generated during oxygen precipitation, are suggested to have an effect on reducing lattice strain associated with the oxygen-precipitation process.

引用

页码：4313 / 4319

页数：7

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