MICRODEFECTS FORMED IN CARBON-DOPED CZ SILICON-CRYSTALS BY OXYGEN PRECIPITATION HEAT-TREATMENT

被引：9

作者：

KANAMORI, M ^{[1
]}

TSUYA, H ^{[1
]}

机构：

[1] NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 05期

关键词：

D O I：

10.1143/JJAP.24.557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：557 / 563

页数：7

共 12 条

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