A DEFECT CONTROL TECHNIQUE FOR THE INTRINSIC GETTERING IN SILICON DEVICE PROCESSING

被引：27

作者：

KISHINO, S

AOSHIMA, T

YOSHINAKA, A

SHIMIZU, H

ONO, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 01期

关键词：

D O I：

10.1143/JJAP.23.L9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L9 / L11

页数：3

共 11 条

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[2] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON - NUCLEATION AND GROWTH-BEHAVIOR [J].

KISHINO, S ;

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[3] HEAVY-METAL GETTERING BY AN INTRINSIC GETTERING TECHNIQUE USING MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-WAFERS [J].

KISHINO, S ;

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[4] MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS AND THEIR APPLICATION TO GETTERING TECHNIQUE [J].

KISHINO, S .

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[5] SUPPRESSION OF OXIDATION-STACKING-FAULT GENERATION BY PRE-ANNEALING IN N2 ATMOSPHERE [J].

KISHINO, S ;

ISOMAE, S ;

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MAKI, M .

APPLIED PHYSICS LETTERS, 1978, 32 (01) :1-3

[6] A NEW INTRINSIC GETTERING TECHNIQUE USING MICRODEFECTS IN CZOCHRALSKI SILICON CRYSTAL - A NEW DOUBLE PREANNEALING TECHNIQUE [J].

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MATSUSHITA, Y ;

KISHINO, S .

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[7] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

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[8] NUCLEATION OF CUSI PRECIPITATE COLONIES IN OXYGEN-RICH SILICON [J].

TICE, WK ;

TAN, TY .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :564-565

[9] REDUCTION OF SAUCER PIT MICRODEFECTS IN EPITAXIAL SILICON-WAFER BY INTRINSIC GETTERING [J].

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APPLIED PHYSICS LETTERS, 1980, 36 (08) :658-660

[10] LIFETIME IMPROVEMENT IN CZOCHRALSKI-GROWN SILICON-WAFERS BY THE USE OF A 2-STEP ANNEALING [J].

YAMAMOTO, K ;

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MATSUSHITA, Y ;

IIZUKA, T .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :195-197

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