A CONSIDERATION OF THE EFFECT OF REACTOR PARAMETERS ON THE CHARACTERISTICS OF LAYERS PREPARED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引:10
作者
HITCHMAN, ML [1 ]
机构
[1] UNIV SALFORD,THIN FILM & SURFACE RES CTR,SALFORD M5 4WT,LANCS,ENGLAND
关键词
D O I
10.1016/0042-207X(84)90070-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:377 / 384
页数:8
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共 33 条
[21]   HYDROGEN IN SEMI-INSULATING POLYCRYSTALLINE SILICON FILMS [J].
KNOLLE, WR ;
MAXWELL, HR ;
BENENSON, RE .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4385-4390
[22]   A MODEL OF SIPOS DEPOSITION BASED ON INFRARED SPECTROSCOPIC ANALYSIS [J].
KNOLLE, WR ;
MAXWELL, HR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2254-2259
[23]   DENSIFICATION OF SIPOS [J].
MAXWELL, HR ;
KNOLLE, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :576-580
[24]   SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) FILMS APPLIED TO MOS INTEGRATED-CIRCUITS [J].
MOCHIZUKI, H ;
AOKI, T ;
YAMOTO, H ;
OKAYAMA, M ;
ABE, M ;
ANDO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :41-48
[25]  
MOELWYNHUGHES EA, 1961, PHYSICAL CHEM, pCH22
[26]   GROWTH TEXTURE OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].
PRATT, B ;
KULKARNI, S ;
POPE, DP ;
GRAHAM, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1760-1762
[27]  
ROSLER RS, 1977, SOLID STATE TECHNOL, V20, P63
[28]   RECRYSTALLIZATION OF POLYCRYSTALLINE CVD GROWN SILICON [J].
SCHINS, WJH ;
BEZEMER, J ;
HOLTROP, H ;
RADELAAR, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) :1193-1199
[30]   CARRIER TRANSPORT IN OXYGEN-RICH POLYCRYSTALLINE-SILICON FILMS [J].
TARNG, ML .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4069-4076