SYNCHROTRON RADIATION EXCITED SI EPITAXIAL-GROWTH USING DISILANE GAS SOURCE MOLECULAR-BEAM SYSTEM

被引：58

作者：

TAKAHASHI, J

UTSUMI, Y

AKAZAWA, H

KAWASHIMA, I

URISU, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 24期

关键词：

D O I：

10.1063/1.104783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon photoepitaxy excited by synchrotron radiation (SR) has been observed for the first time. The epitaxial growth is observed even at lower than a 400-degrees-C substrate temperature. The surface of the as-grown film exhibits a 2 X 1 reconstruction reflection high-energy electron diffraction pattern, indicating two-dimensional growth. At lower than 600-degrees-C, the SR-irradiation growth rate is larger than that of thermal growth. This result suggests that SR irradiation enhances the dynamic surface reactions, such as desorption of hydrogen and surface migration of adsorbed species.

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页码：2776 / 2778

页数：3

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