GAINP GROWTH BY CHLORIDE VAPOR-PHASE EPITAXY

被引：10

作者：

HOSHINO, M

KITAHARA, K

KODAMA, K

OZEKI, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 01期

关键词：

D O I：

10.1016/0022-0248(89)90287-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：188 / 200

页数：13

相关论文

共 35 条

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[7] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
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[8] CHLORIDE VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINP
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[9] OMVPE GROWTH OF GAINP
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[10] ITO K, 1974, T IEE JAPAN A, V94, P45

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