A NEW MODEL FOR THE THERMAL-OXIDATION KINETICS OF SILICON

被引：36

作者：

NICOLLIAN, EH ^{[1
]}

REISMAN, A ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期

关键词：

D O I：

10.1007/BF02652105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：263 / 272

页数：10

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