HOMOGENEITY QUALIFICATION OF GAAS SUBSTRATES FOR LARGE-SCALE INTEGRATION APPLICATIONS

被引：14

作者：

MALUENDA, J ^{[1
]}

MARTIN, GM ^{[1
]}

SCHINK, H ^{[1
]}

PACKEISER, G ^{[1
]}

机构：

[1] SIEMENS AG,D-8000 MUNICH 83,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.96699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：715 / 717

页数：3

共 10 条

[1] THE DEPENDENCE OF THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFET ON ANNEALING METHOD [J].

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NAKAMURA, H ;

ISHIDA, T ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (01) :L35-L38

[2] CHARACTERIZATION OF THIN ACTIVE LAYER ON SEMI-INSULATING GAAS BY MAPPING OF FET ARRAY PERFORMANCE [J].

ISHII, Y ;

MIYAZAWA, S ;

ISHIDA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1051-1056

[3]

MARTIN GM, 1984, 11TH INT S GAAS REL

[4] UNIFORMITY EVALUATION OF MESFETS FOR GAAS LSI FABRICATION [J].

MATSUOKA, Y ;

OHWADA, K ;

HIRAYAMA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1062-1067

[5] IMPROVEMENT OF CRYSTAL HOMOGENEITIES IN LIQUID-ENCAPSULATED CZOCHRALSKI GROWN, SEMI-INSULATING GAAS BY HEAT-TREATMENT [J].

MIYAZAWA, S ;

HONDA, T ;

ISHII, Y ;

ISHIDA, S .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :410-412

[6] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

MIYAZAWA, S ;

ISHII, Y ;

ISHIDA, S ;

NANISHI, Y .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :853-855

[7]

SATO T, 1984, OCT P IEEE GAAS INT

[8]

SCHINK H, UNPUB JPN J APPL PHY

[9] SUBSTRATE EFFECTS ON THE THRESHOLD VOLTAGE OF GAAS FIELD-EFFECT TRANSISTORS [J].

WINSTON, HV ;

HUNTER, AT ;

OLSEN, HM ;

BRYAN, RP ;

LEE, RE .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :447-449

[10]

WINSTON HV, 1984, 11TH INT S GALL ARS

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