DISCHARGING PROCESS BY MULTIPLE TUNNELINGS IN THIN-OXIDE MNOS STRUCTURES

被引：1

作者：

YAMAMOTO, H ^{[1
]}

IWASAWA, H ^{[1
]}

SASAKI, A ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 08期

关键词：

D O I：

10.1109/T-ED.1982.20864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1255 / 1261

页数：7

共 13 条

[1] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].

ARNETT, PC ;

YUN, BH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96

[2] THEORY OF MNOS MEMORY TRANSISTOR [J].

CHANG, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) :511-518

[3]

Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109

[4] THEORY OF MNOS MEMORY DEVICE BEHAVIOR [J].

FERRISPRABHU, AV .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (02) :125-134

[5] CHARGE-TRANSFER BY DIRECT TUNNELING IN THIN-OXIDE MEMORY TRANSISTORS [J].

FERRISPRABHU, AV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) :524-530

[6] TIME-DEPENDENCE OF CHARGE TRANSPORT IN MIS MEMORY TRANSISTORS [J].

FERRISPRABHU, AV .

APPLIED PHYSICS LETTERS, 1972, 20 (04) :149-+

[7] TUNNELLING THEORIES OF NONVOLATILE SEMICONDUCTOR MEMORIES [J].

FERRISPRABHU, AV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (01) :243-250

[8] HIGH-FIELD CONDUCTIVITY OF AMORPHOUS INSULATOR FILMS [J].

GRITSENKO, VA ;

MEERSON, EE ;

MOGILNIKOV, KP ;

SINITSA, SP .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1979, 52 (01) :47-57

[9]

LEHOVEC K, 1977, J ELECTRON MATER, V6, P77, DOI 10.1007/BF02660376

[10] TUNNELING TO TRAPS IN INSULATORS [J].

LUNDSTROM, I ;

SVENSSON, C .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5045-5047

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