ION BEAM-ASSISTED ETCHING OF ALUMINUM WITH CHLORINE

被引：4

作者：

TSOU, LY ^{[1
]}

机构：

[1] AT&T TECHNOL INC,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1149/1.2114271

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2010 / 2012

页数：3

共 13 条

[1] ANDERSON HH, 1981, SPUTTERING PARTICLE
[2] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338
[3] REACTIVE ION-BEAM ETCHING OF SIO2 AND POLYCRYSTALLINE SILICON
BROWN, DM
HEATH, BA
COUTUMAS, T
THOMPSON, GR
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 159 - 161
[4] OPTICAL SPECTROSCOPY DURING REACTIVE ION-BEAM ETCHING OF SI AND AL TARGETS
DZIOBA, S
NAGUIB, HM
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4389 - 4394
[5] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE
GEIS, MW
LINCOLN, GA
EFREMOW, N
PIACENTINI, WJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1390 - 1393
[6] TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .2. APPLICATIONS
HARPER, JME
CUOMO, JJ
KAUFMAN, HR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03): : 737 - 756
[7] REACTIVE ION-BEAM ETCHING USING A BROAD BEAM ECR ION-SOURCE
MATSUO, S
ADACHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (01): : L4 - L6
[8] INVESTIGATION OF PLASMA-ETCHING MECHANISMS USING BEAMS OF REACTIVE GAS IONS
MAYER, TM
BARKER, RA
WHITMAN, LJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 349 - 352
[9] Melliar-Smith C. M., 1978, THIN FILM PROCESSES
[10] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON
MOGAB, CJ
LEVINSTEIN, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 721 - 730