THE INFLUENCE OF GATE-FEEDER MESA-EDGE CONTACTING ON SIDEGATING EFFECTS IN IN0.52AL0.48AS/IN0.53GA0.47AS HETEROSTRUCTURE FET

被引：9

作者：

CHAN, YJ

PAVLIDIS, D

NG, GI

机构：

[1] Center for High Frequency Microelectronics, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 07期

关键词：

D O I：

10.1109/55.103607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sidegating effects in InAlAs/InGaAs heterostructure FET's (HFET's) are experimentally investigated. HFET's with the gate air bridge over the mesa edge can maintain 99% of the drain-source (I(ds)) current level at sidegate voltages (V(sg)) extending up to -30 V, while the non-air-bridge configuration of HFET's shows a 30% drop of I(ds) at the same V(sg). This significant discrepancy of sidegating effect is attributed to depletion region modulation at the mesa edge below the gate feeder. By lifting the gate feeder above the mesa step, sidegating is reduced, which suggests the channel/substrate trap effects are negligibly small.

引用

页码：360 / 362

页数：3

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