2-D DOPANT PROFILING IN VLSI DEVICES USING DOPANT-SELECTIVE ETCHING - AN ATOMIC-FORCE MICROSCOPY STUDY

被引：22

作者：

BARRETT, M ^{[1
]}

DENNIS, M ^{[1
]}

TIFFIN, D ^{[1
]}

LI, Y ^{[1
]}

SHIH, CK ^{[1
]}

机构：

[1] ADV MICRO DEVICES INC,AUSTIN,TX 78741

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 03期

关键词：

D O I：

10.1109/55.363243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method.

引用

页码：118 / 120

页数：3

共 12 条

[1] P2S5 PASSIVATION OF GAAS-SURFACES FOR SCANNING TUNNELING MICROSCOPY IN AIR
DAGATA, JA
TSENG, W
BENNETT, J
SCHNEIR, J
HARARY, HH
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (25) : 3288 - 3290
[2] IMAGING OF PASSIVATED III-V-SEMICONDUCTOR SURFACES BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR
DAGATA, JA
TSENG, W
BENNETT, J
SCHNEIR, J
HARARY, HH
[J]. ULTRAMICROSCOPY, 1992, 42 : 1288 - 1294
[3] CROSS-SECTIONAL IMAGING AND SPECTROSCOPY OF GAAS DOPING SUPERLATTICES BY SCANNING TUNNELING MICROSCOPY
FEENSTRA, RM
YU, ET
WOODALL, JM
KIRCHNER, PD
LIN, CL
PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (07) : 795 - 797
[4] SCANNING TUNNELING MICROSCOPY OF GAAS MULTIPLE PN JUNCTIONS
GWO, S
SMITH, AR
SHIH, CK
SADRA, K
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (09) : 1104 - 1106
[5] 2-DIMENSIONAL IMAGING OF CLEAVED SI P-N-JUNCTIONS WITH 30-NM RESOLUTION USING A UHV SCANNING TUNNELING MICROSCOPE
KORDIC, S
VANLOENEN, EJ
WALKER, AJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 422 - 424
[6] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF 2-DIMENSIONAL SEMICONDUCTOR-DEVICE JUNCTION DELINEATION BY CHEMICAL ETCHING
LIU, JB
DASS, MLA
GRONSKY, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01): : 353 - 356
[7] CHARACTERIZATION OF STRUCTURE DOPANT BEHAVIOR BY ELECTRON-MICROSCOPY
MAHER, DM
ZHANG, B
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01): : 347 - 352
[8] ULTRA-SHALLOW JUNCTIONS IN SILICON USING AMORPHOUS AND POLYCRYSTALLINE SILICON SOLID DIFFUSION SOURCES
PARK, K
BATRA, S
BANERJEE, S
LUX, G
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (03) : 261 - 265
[9] CARRIER DISTRIBUTION IN SILICON DEVICES BY ATOMIC-FORCE MICROSCOPY ON ETCHED SURFACES
RAINERI, V
PRIVITERA, V
VANDERVORST, W
HELLEMANS, L
SNAUWAERT, J
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (03) : 354 - 356
[10] COMPARATIVE-STUDY OF CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY SPECTROSCOPY ON III-V HETEROSTRUCTURES AND HOMOSTRUCTURES - ULTRAHIGH VACUUM-CLEAVED VERSUS SULFIDE PASSIVATED
SMITH, AR
GWO, S
SADRA, K
SHIH, YC
STREETMAN, BG
SHIH, CK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2610 - 2615

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