DEVELOPMENT OF A RADIATION HARD N-CHANNEL POWER MOSFET

被引：15

作者：

ROPER, GB ^{[1
]}

LOWIS, R ^{[1
]}

机构：

[1] MULLARD LTD,SOUTHAMPTON,ENGLAND

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4110 / 4115

页数：6

共 20 条

[1] POST-GATE PLASMA AND SPUTTER PROCESS EFFECTS ON RADIATION HARDNESS OF METAL GATE CMOS INTEGRATED-CIRCUITS [J].

ANDERSON, RE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1459-1464

[2] DEGRADATION OF RADIATION HARDNESS IN CMOS INTEGRATED-CIRCUITS PASSIVATED WITH PLASMA-DEPOSITED SILICON-NITRIDE [J].

ANDERSON, RE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5180-5184

[3]

BAKER WE, 1980, P POWERCON, V7, pD3

[4] VDMOS POWER TRANSISTOR DRAIN-SOURCE RESISTANCE RADIATION DEPENDENCE [J].

BLACKBURN, DL ;

ROBBINS, TC ;

GALLOWAY, KF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4354-4359

[5] IONIZING-RADIATION EFFECTS ON POWER MOSFETS DURING HIGH-SPEED SWITCHING [J].

BLACKBURN, DL ;

BERNING, DW ;

BENEDETTO, JM ;

GALLOWAY, KF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1555-1558

[6]

BLACKBURN DL, 1983, JUL IEEE NSREC

[7] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J].

FAIR, RB ;

SUN, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :83-94

[8] SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES [J].

FREEMAN, R ;

HOLMESSIEDLE, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1216-1225

[9] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1462-1466

[10] RADIATION EFFECTS ON THIN-OXIDE MOS CAPACITORS CAUSED BY ELECTRON-BEAM EVAPORATION OF ALUMINUM [J].

HAMASAKI, M .

SOLID-STATE ELECTRONICS, 1983, 26 (04) :299-303

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