DETERMINATION OF AL MOLE FRACTION FOR NULL CONDUCTION-BAND OFFSET IN IN0.5GA0.5P/ALXGA1-XAS HETEROJUNCTION BY PHOTOLUMINESCENCE MEASUREMENT

被引：24

作者：

KIM, KS

CHO, YH

CHOE, BD

JEONG, WG

LIM, H

机构：

[1] SUNGKYUNKWAN UNIV, DEPT MAT ENGN, SUWON, SOUTH KOREA

[2] AJOU UNIV, DEPT ELECTR ENGN, SUWON, SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 12期

关键词：

D O I：

10.1063/1.115027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence properties of In0.5Ga0.5P/AlxGa1-xAs heterojunctions in both staggered and straddling band alignment regimes have been investigated. From the relation between the energies of below-band gap luminescence and Al compositions in the staggered band alignment regime, we determined the Al composition for null conduction band offset of the heterojunction as well as the conduction band offset value of In0.5Ga0.5P/GaAs heterojunction. Assuming the transitivity between the conduction band offset values, we also obtained the fraction of the band gap energy difference that is associated with the conduction band offset of an AlGaAs/GaAs heterojunction. (C) 1995 American Institute of Physics.

引用

收藏

页码：1718 / 1720

页数：3

相关论文

共 21 条

[11] STAGGERED-LINEUP HETEROJUNCTIONS AS SOURCES OF TUNABLE BELOW-GAP RADIATION - OPERATING PRINCIPLE AND SEMICONDUCTOR SELECTION [J].

KROEMER, H ;

GRIFFITHS, G .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (01) :20-22

[12] COMPARISON OF SINGLE-HETEROSTRUCTURE AND DOUBLE-HETEROSTRUCTURE ALGAAS/INGAP RED LIGHT-EMITTING-DIODES PREPARED BY LIQUID-PHASE EPITAXY [J].

LEE, CY ;

WU, MC ;

LU, SC .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) :3940-3944

[13] THE CHARACTERISTICS OF AN IN0.5GA0.5P AND IN0.5GA0.5P/GAAS HETEROJUNCTION GROWN ON A (100) GAAS SUBSTRATE BY LIQUID-PHASE EPITAXY [J].

LEE, JB ;

KWON, SD ;

KIM, I ;

CHO, YH ;

CHOE, BD .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) :5016-5021

[14] CONDUCTION-BAND DISCONTINUITY IN INGAP/GAAS MEASURED USING BOTH CURRENT-VOLTAGE AND PHOTOEMISSION METHODS [J].

LEE, TW ;

HOUSTON, PA ;

KUMAR, R ;

YANG, XF ;

HILL, G ;

HOPKINSON, M ;

CLAXTON, PA .

APPLIED PHYSICS LETTERS, 1992, 60 (04) :474-476

[15]

LU SC, 1991, J APPL PHYS, V59, P481

[16] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF GAAS/ALXGA1-XAS INTERFACES BY CAPACITANCE-VOLTAGE MEASUREMENTS [J].

OKUMURA, H ;

MISAWA, S ;

YOSHIDA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :377-379

[17] DETERMINATION OF VALENCE AND CONDUCTION-BAND DISCONTINUITIES AT THE (GA,IN) P/GAAS HETEROJUNCTION BY C-V PROFILING [J].

RAO, MA ;

CAINE, EJ ;

KROEMER, H ;

LONG, SI ;

BABIC, DI .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :643-649

[18] GROWTH AND CHARACTERIZATION OF TYPE-II TYPE-I ALGAINAS/INP INTERFACES [J].

SACILOTTI, M ;

MOTISUKE, F ;

MONTEIL, Y ;

ABRAHAM, P ;

IIKAWA, F ;

MONTES, C ;

FURTADO, M ;

HORIUCHI, L ;

LANDERS, R ;

MORAIS, J ;

CARDOSO, L ;

DECOBERT, J ;

WALDMAN, B .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :589-595

[19] INTERFACE PROPERTIES FOR GAAS/INGAALP HETEROJUNCTIONS BY THE CAPACITANCE-VOLTAGE PROFILING TECHNIQUE [J].

WATANABE, MO ;

OHBA, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :906-908

[20] BAND DISCONTINUITY FOR GAAS ALGAAS HETEROJUNCTION DETERMINED BY C-V PROFILING TECHNIQUE [J].

WATANABE, MO ;

YOSHIDA, J ;

MASHITA, M ;

NAKANISI, T ;

HOJO, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5340-5344