GROWTH OF GAAS-AL-GAAS BY MIGRATION-ENHANCED EPITAXY

被引：9

作者：

TADAYON, B ^{[1
]}

TADAYON, S ^{[1
]}

SPENCER, MG ^{[1
]}

HARRIS, GL ^{[1
]}

RATHBUN, L ^{[1
]}

BRADSHAW, JT ^{[1
]}

SCHAFF, WJ ^{[1
]}

TASKER, PJ ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2664 / 2665

页数：2

共 18 条

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APPLIED PHYSICS LETTERS, 1987, 50 (23) :1686-1687

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HUANG, YH ;

YU, PY ;

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[6]

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LINH, NT .

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[9] EFFECTS OF VERY LOW GROWTH-RATES ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES [J].

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CALAWA, AR .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :818-820

[10] ELECTRICAL-PROPERTIES OF INDIUM DOPED GAAS-LAYERS GROWN BY MBE [J].

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