THE GROWTH OF TITANIUM SILICIDES IN THIN-FILM TI/SI STRUCTURES

被引：8

作者：

LAKSHMIKUMAR, ST

RASTOGI, AC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：604 / 608

页数：5

共 20 条

[1] NUCLEATION-CONTROLLED THIN-FILM INTERACTIONS - SOME SILICIDES [J].

ANDERSON, R ;

BAGLIN, J ;

DEMPSEY, J ;

HAMMER, W ;

DHEURLE, F ;

PETERSSON, S .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :285-287

[2] TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM [J].

BERTI, M ;

DRIGO, AV ;

COHEN, C ;

SIEJKA, J ;

BENTINI, GG ;

NIPOTI, R ;

GUERRI, S .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3558-3565

[3] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J].

BEYERS, R ;

SINCLAIR, R .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5240-5245

[4] CO2SI, CRSI2, ZRSI2 AND TISI2 FORMATION STUDIED BY A RADIOACTIVE SI-31 MARKER TECHNIQUE [J].

BOTHA, AP ;

PRETORIUS, R .

THIN SOLID FILMS, 1982, 93 (1-2) :127-133

[5]

BOTHA AP, 1982, P MATERIALS RES C BO, P129

[6] CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE [J].

BUTZ, R ;

RUBLOFF, GW ;

TAN, TY ;

HO, PS .

PHYSICAL REVIEW B, 1984, 30 (10) :5421-5429

[7] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].

BUTZ, R ;

RUBLOFF, GW ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775

[8] METAL-SEMICONDUCTOR INTERFACIAL REACTIONS - NI-SI SYSTEM [J].

CHEUNG, NW ;

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MAYER, JW ;

ULLRICH, BM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :917-923

[9] NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE [J].

CHEUNG, NW ;

CULBERTSON, RJ ;

FELDMAN, LC ;

SILVERMAN, PJ ;

WEST, KW ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 45 (02) :120-124

[10] GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES [J].

GOSELE, U ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3252-3260

← 1 2 →