THE EFFICIENCY OF GAS USAGE IN GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON

被引:3
作者
SMITH, GJ
MILNE, WI
机构
来源
SOLAR ENERGY MATERIALS | 1984年 / 9卷 / 04期
关键词
D O I
10.1016/0165-1633(84)90019-4
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:459 / 470
页数:12
相关论文
共 28 条
[1]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[2]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS-CARBON PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :17-26
[3]   AMORPHOUS SILICON SOLAR-CELL [J].
CARLSON, DE ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673
[4]   OPTICAL AND ELECTRICAL-PROPERTIES OF CHLORINATED AND HYDROGENATED AMORPHOUS-SILICON PREPARED BY GLOW-DISCHARGE [J].
CHEVALLIER, J ;
KALEM, S ;
ALDALLAL, S ;
BOURNEIX, J .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1982, 51 (03) :277-290
[5]   PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].
CHITTICK, RC ;
ALEXANDE.JH ;
STERLING, HF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :77-&
[6]   HYDROGEN CONTENT AND DENSITY OF PLASMA-DEPOSITED AMORPHOUS SILICON-HYDROGEN [J].
FRITZSCHE, H ;
TANIELIAN, M ;
TSAI, CC ;
GACZI, PJ .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3366-3369
[7]  
Gay R. R., 1982, Fourth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P714
[8]   RECENT ADVANCES IN AMORPHOUS-SILICON SOLAR-CELLS [J].
HAMAKAWA, Y .
SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :101-121
[9]   DEPOSITION OF PLASMA SILICON-OXIDE THIN-FILMS IN A PRODUCTION PLANAR REACTOR [J].
HOLLAHAN, JR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :930-934
[10]   EFFECTS OF THE SUBSTRATE POTENTIAL ON THE INCORPORATION MANNER OF HYDROGEN AND IMPURITY IN ALPHA-SI-H FILMS [J].
HOTTA, S ;
TAWADA, Y ;
OKAMOTO, H ;
HAMAKAWA, Y .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :631-634