DOSE DEPENDENCE OF THE SILICON NEAR-SURFACE MODIFICATIONS CAUSED BY CF4 REACTIVE ION-BEAM ETCHING

被引：1

作者：

LEJEUNE, C ^{[1
]}

GRANDCHAMP, JP ^{[1
]}

GILLES, JP ^{[1
]}

COLLARD, E ^{[1
]}

SCHEIBLIN, P ^{[1
]}

机构：

[1] CNRS,UNITE 22,INST ELECTR FONDAMENTALE,F-91405 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.342871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2156 / 2159

页数：4

共 16 条

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