CHARACTERIZATION OF MULTILAYER GAAS/ALGAAS TRANSISTOR STRUCTURES BY VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY

被引：6

作者：

MERKEL, KG ^{[1
]}

SNYDER, PG ^{[1
]}

WOOLLAM, JA ^{[1
]}

ALTEROVITZ, SA ^{[1
]}

RAI, AK ^{[1
]}

机构：

[1] UNIV NEBRASKA,CTR MICROELECTR & OPT MAT RES,DEPT ELECT ENGN,LINCOLN,NE 68588

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 06期

关键词：

D O I：

10.1143/JJAP.28.1118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1118 / 1123

页数：6

共 20 条

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