FABRICATION AND LASING CHARACTERISTICS OF 0.67 MU-M GAINASP/ALGAAS VISIBLE LASERS PREPARED BY LIQUID-PHASE EPITAXY ON (100) GAAS SUBSTRATES

被引：14

作者：

KISHINO, K

HARADA, A

KANEKO, Y

机构：

[1] Sophia Univ, Tokyo, Jpn, Sophia Univ, Tokyo, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 02期

关键词：

D O I：

10.1109/JQE.1987.1073313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：180 / 187

页数：8

共 37 条

[11] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517

[12] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

IKEDA, M ;

MORI, Y ;

SATO, H ;

KANEKO, K ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1027-1028

[13] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

ISHIKAWA, M ;

OHBA, Y ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208

[14] PULSED OPERATION OF INGAASP/INGAP DOUBLE HETEROSTRUCTURE VISIBLE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

IWAMOTO, T ;

MORI, K ;

MIZUTA, M ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L131-L132

[15] NEAR ROOM-TEMPERATURE CW OPERATION OF 660 NM VISIBLE ALGAAS MULTI-QUANTUM-WELL LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].

IWAMURA, H ;

SAKU, T ;

HIRAYAMA, Y ;

SUZUKI, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (12) :L911-L913

[16] DEGRADATION MECHANISMS OF GA1-XALX AS VISIBLE DIODE-LASERS [J].

KAJIMURA, T .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :908-913

[17] ROOM-TEMPERATURE CW OPERATION OF INGAPAS GAALAS VISIBLE-LIGHT DOUBLE HETEROJUNCTION LASERS [J].

KANEIWA, S ;

TAKIGUCHI, H ;

HAYAKAWA, T ;

YAMAMOTO, S ;

HAYASHI, H ;

YANO, S ;

HIJIKATA, T .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :455-457

[18] 0.66 MU-M ROOM-TEMPERATURE OPERATION OF INGAAIP DH LASER-DIODES GROWN BY MBE [J].

KAWAMURA, Y ;

ASAHI, H ;

NAGAI, H ;

IKEGAMI, T .

ELECTRONICS LETTERS, 1983, 19 (05) :163-165

[19] LOW THRESHOLD CURRENT-DENSITY OF GAINASP VISIBLE INJECTION-LASER DIODES LATTICE MATCHED WITH (100) GAAS EMITTING AT 705 NM [J].

KAWANISHI, H ;

TSUCHIYA, N .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :37-39

[20]

KAWANISHI K, COMMUNICATION

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