CURRENT-VOLTAGE CHARACTERISTIC OF TI-PSI METAL-OXIDE-SEMICONDUCTOR DIODES

被引：104

作者：

HANSELAER, PL

LAFLERE, WH

VANMEIRHAEGHE, RL

CARDON, F

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.334265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2309 / 2314

页数：6

共 30 条

[11]

Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11

[12] TEMPERATURE ANOMALIES OF SCHOTTKY-BARRIER DIODES ON N-TYPE SILICON [J].

JAGER, D ;

KASSING, R .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4413-4414

[13] DC CHARACTERISTICS OF SILICON AND GERMANIUM POINT CONTACT CRYSTAL RECTIFIERS .2. THE MULTICONTACT THEORY [J].

JOHNSON, VA ;

SMITH, RN ;

YEARIAN, HJ .

JOURNAL OF APPLIED PHYSICS, 1950, 21 (04) :283-289

[14] EVIDENCE OF TUNNEL-ASSISTED TRANSPORT IN NONDEGENERATE MOS AND SEMICONDUCTOR-OXIDE-SEMICONDUCTOR DIODES AT ROOM-TEMPERATURE [J].

KAR, S ;

ASHOK, S ;

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3417-3421

[15]

LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[16] QUANTITATIVE MODEL FOR CURRENT-VOLTAGE CHARACTERISTICS OF METAL POINT CONTACTS ON SILICON RECTIFYING JUNCTIONS [J].

MARCHAND, JJ ;

TRUONG, VK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :7034-7040

[17] INFLUENCE OF SEMICONDUCTOR BARRIER TUNNELING ON THE CURRENT-VOLTAGE CHARACTERISTICS OF TUNNEL METAL-OXIDE-SEMICONDUCTOR DIODES [J].

NIELSEN, OM .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5880-5886

[18] GENERATION-RECOMBINATION CHARACTERISTIC BEHAVIOR OF SILICON DIODES [J].

NUSSBAUM, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 19 (02) :441-450

[19] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

STRATTON, R .

SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&

[20]

Rhoderick E H, 1980, METAL SEMICONDUCTOR

← 1 2 3 →