TWO-DIMENSIONAL PROCESS MODELING - A DESCRIPTION OF THE SAFEPRO PROGRAM

被引：21

作者：

OBRIEN, RR

HSIEH, CM

MOORE, JS

LEVER, RF

MURLEY, PC

BRANNON, KW

SRINIVASAN, GR

KNEPPER, RW

机构：

[1] IBM, Computer Aided Device Design, Dep, Hopewell Junction, NY, USA, IBM, Computer Aided Device Design Dep, Hopewell Junction, NY, USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1985年 / 29卷 / 03期

关键词：

D O I：

10.1147/rd.293.0229

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：229 / 241

页数：13

共 21 条

[1] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS [J].

ANTONIADIS, DA ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :490-500

[2]

Bunch J. R., 1976, SPARSE MATRIX COMPUT

[3] THE GENERATION OF 3-DIMENSIONAL BIPOLAR-TRANSISTOR MODELS FOR CIRCUIT ANALYSIS [J].

CHANG, FY ;

WAGNER, LF .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1985, 29 (03) :252-262

[4]

CHU SF, 1983, 1ST P INT S VLSI SCI

[5] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].

FURUKAWA, S ;

ISHIWARA, H ;

MATSUMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) :134-+

[6] TWO-DIMENSIONAL DEVICE SIMULATION PROGRAM - 2DP [J].

GAUR, SP ;

HABITZ, PA ;

PARK, YJ ;

COOK, RK ;

HUANG, YS ;

WAGNER, LF .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1985, 29 (03) :242-251

[7]

GEORGE A, 1980, COMPUTER SOLUTION LA

[8] GENERALIZED-MODEL FOR THE CLUSTERING OF AS DOPANTS IN SI [J].

GUERRERO, E ;

POTZL, H ;

TIELERT, R ;

GRASSERBAUER, M ;

STINGEDER, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1826-1831

[9] SEMICONDUCTOR ANALYSIS USING FINITE-ELEMENTS .1. COMPUTATIONAL ASPECTS [J].

HACHTEL, GD ;

MACK, MH ;

OBRIEN, RR ;

SPEELPENNING, B .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) :232-245

[10]

HO GP, 1983, IEEE T ELECTRON DEV, V27, P1438

← 1 2 3 →