DIGITAL NMOS TEST CIRCUITS FABRICATED IN SILICON MBE

被引：3

作者：

SWARTZ, RG

CHIN, GM

VOSHCHENKOV, AM

KO, P

WOOLEY, BA

FINEGAN, SN

BOSWORTH, RH

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 02期

关键词：

D O I：

10.1109/EDL.1984.25821

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：29 / 31

页数：3

共 10 条

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[8] INSITU LOW-ENERGY BF-2+ ION DOPING FOR SILICON MOLECULAR-BEAM EPITAXY [J].

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[9]

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[10] STRESS-ENHANCED CARRIER MOBILITY IN ZONE-MELTING RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO-2-COATED SUBSTRATES [J].

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