RELIABILITY OF INGAAS/INP LONG-WAVELENGTH P-I-N PHOTODIODES PASSIVATED WITH POLYIMIDE THIN-FILM

被引：18

作者：

KUHARA, Y

TERAUCHI, H

NISHIZAWA, H

机构：

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1986年 / 4卷 / 07期

关键词：

D O I：

10.1109/JLT.1986.1074785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：933 / 937

页数：5

共 8 条

[1] FAILURE MODE ANALYSIS OF PLANAR ZINC-DIFFUSED IN0.53GA0.47AS P-I-N PHOTODIODES [J].

CHIN, AK ;

CHEN, FS ;

ERMANIS, F .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) :1596-1606

[2] HIGH-TEMPERATURE AGING TESTS ON PLANAR STRUCTURE INGAAS INP PIN PHOTODIODES WITH TI/PT AND TI/AU CONTACT [J].

ISHIHARA, H ;

MAKITA, K ;

SUGIMOTO, Y ;

TORIKAI, T ;

TAGUCHI, K .

ELECTRONICS LETTERS, 1984, 20 (16) :654-656

[3] PLANAR MULTILEVEL INTERCONNECTION TECHNOLOGY EMPLOYING A POLYIMIDE [J].

MUKAI, K ;

SAIKI, A ;

YAMANAKA, K ;

HARADA, S ;

SHOJI, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :462-467

[4] RELIABILITY ASSURANCE FOR DEVICES WITH A SUDDEN-FAILURE CHARACTERISTIC [J].

SAUL, RH ;

CHEN, FS .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (12) :467-468

[5] THE RELIABILITY OF SILICON AVALANCHE PHOTO-DIODES FOR USE IN OPTICAL-FIBER TRANSMISSION-SYSTEMS [J].

SIM, SP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) :1611-1616

[6] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

SNOW, EH ;

GROVE, AS ;

DEAL, BE ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&

[7]

Tashiro Y., 1983, Journal of Lightwave Technology, VLT-1, P269, DOI 10.1109/JLT.1983.1072092

[8] LARGE-AREA AND VISIBLE RESPONSE VPE INGAAS PHOTO-DIODES [J].

WEBB, PP ;

OLSEN, GH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :395-400

← 1 →