STRONG ELECTRON-PHONON COUPLING IN DEFECT LUMINESCENCE IN P-DOPED ALPHA-SI-H

被引：17

作者：

TAJIMA, M ^{[1
]}

OKUSHI, H ^{[1
]}

YAMASAKI, S ^{[1
]}

TANAKA, K ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8522

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8522 / 8524

页数：3

共 17 条

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[7] TEMPERATURE-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF LOCALIZED STATES IN A-SI-H [J].

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[8] DETERMINATION OF THE DENSITY OF STATE DISTRIBUTION OF A-SI-H BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J].

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[9]

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