TECHNICAL METHOD OF DETERMINATION OF THE INTERFACE TRAP DENSITY

[1] INVERSION CHARGE REDISTRIBUTION MODEL OF HIGH-FREQUENCY MOS CAPACITANCE [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 735 - 742

[2] ERROR ANALYSIS OF HIGH-FREQUENCY MOS CAPACITANCE CALCULATIONS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (05) : 447 - 456

[3] DeClerck G., 1979, Nondestructive Evaluation of Semiconductor Materials and Devices, P105

[4] INFLUENCE OF AN IMPURITY PROFILE ON DETERMINATION OF INTERFACE STATES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (10) : 1227 - 1230

[5] CHARACTERIZATION OF SURFACE STATES AT SI-SIO2 INTERFACE USING QUASI-STATIC TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (12) : 2002 - +

[6] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[7] A SINGLE-FREQUENCY APPROXIMATION FOR INTERFACE-STATE DENSITY DETERMINATION [J]. SOLID-STATE ELECTRONICS, 1980, 23 (09) : 987 - 993

[8] SIMPLE FORMULAS FOR ANALYSIS OF C-V-CHARACTERISTICS OF MIS CAPACITOR [J]. SOLID-STATE ELECTRONICS, 1983, 26 (08) : 755 - 756

[9] SIMPLE METHOD FOR DETERMINATION OF THE INTERFACE TRAP DENSITY AT THE MIDGAP IN MOS STRUCTURES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02): : 545 - 549

[10] METHOD FOR THE DETERMINATION OF THE DISTRIBUTION OF THE CONCENTRATION OF INTERFACE STATES OF MOS STRUCTURES [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (05) : 535 - 539

[1] INVERSION CHARGE REDISTRIBUTION MODEL OF HIGH-FREQUENCY MOS CAPACITANCE [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 735 - 742

[2] ERROR ANALYSIS OF HIGH-FREQUENCY MOS CAPACITANCE CALCULATIONS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (05) : 447 - 456

[3] DeClerck G., 1979, Nondestructive Evaluation of Semiconductor Materials and Devices, P105

[4] INFLUENCE OF AN IMPURITY PROFILE ON DETERMINATION OF INTERFACE STATES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (10) : 1227 - 1230

[5] CHARACTERIZATION OF SURFACE STATES AT SI-SIO2 INTERFACE USING QUASI-STATIC TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (12) : 2002 - +

[6] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[7] A SINGLE-FREQUENCY APPROXIMATION FOR INTERFACE-STATE DENSITY DETERMINATION [J]. SOLID-STATE ELECTRONICS, 1980, 23 (09) : 987 - 993

[8] SIMPLE FORMULAS FOR ANALYSIS OF C-V-CHARACTERISTICS OF MIS CAPACITOR [J]. SOLID-STATE ELECTRONICS, 1983, 26 (08) : 755 - 756

[9] SIMPLE METHOD FOR DETERMINATION OF THE INTERFACE TRAP DENSITY AT THE MIDGAP IN MOS STRUCTURES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02): : 545 - 549

[10] METHOD FOR THE DETERMINATION OF THE DISTRIBUTION OF THE CONCENTRATION OF INTERFACE STATES OF MOS STRUCTURES [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (05) : 535 - 539