ELIMINATION OF PARASITIC BIPOLAR-INDUCED BREAKDOWN EFFECTS IN ULTRA-THIN SOI MOSFETS USING NARROW-BANDGAP-SOURCE (NBS) STRUCTURE

被引：11

作者：

SIM, JH

CHOI, CH

KIM, K

机构：

[1] Memory Division, Samsung Electronics Corporation, Kyungki-Do

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 08期

关键词：

D O I：

10.1109/16.398664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we introduce the Si/SiGe narrow-bandgap-source (NBS) SOI device structure in order to improve the low drain-to-source breakdown voltage (V-BD) in ultra-thin SOI devices. Reducing the potential barrier of valence band between source and body by applying the SiGe layer at the source region, we can improve the drain-to-source breakdown voltage by suppressing the hole accumulation in the body. As comfirmed by 2D simulation results, NBS-SOI devices provide excellent performance compared to conventional SOI devices.

引用

收藏

页码：1495 / 1502

页数：8

相关论文

共 26 条

[1] CHARACTERIZATION OF BIPOLAR SNAPBACK AND BREAKDOWN VOLTAGE IN THIN-FILM SOI TRANSISTORS BY 2-DIMENSIONAL SIMULATION [J].

ARMSTRONG, GA ;

DAVIS, JR ;

DOYLE, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) :328-336

[2] ANALYSIS OF THE LATCH AND BREAKDOWN PHENOMENA IN N AND P CHANNEL THIN-FILM SOI MOSFETS AS A FUNCTION OF TEMPERATURE [J].

BALESTRA, F ;

JOMAAH, J ;

GHIBAUDO, G ;

FAYNOT, O ;

AUBERTONHERVE, AJ ;

GIFFARD, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (01) :109-112

[3] SINGLE-TRANSISTOR LATCH IN SOI MOSFETS [J].

CHEN, CED ;

MATLOUBIAN, M ;

SUNDARESAN, R ;

MAO, BY ;

WEI, CC ;

POLLACK, GP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :636-638

[4] MODELING FOR FLOATING BODY EFFECTS IN FULLY DEPLETED SOI MOSFETS [J].

CHEN, HTH ;

HUANG, RS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :583-590

[5] ANALYSIS AND CONTROL OF FLOATING-BODY BIPOLAR EFFECTS IN FULLY DEPLETED SUBMICROMETER SOI MOSFETS [J].

CHOI, JY ;

FOSSUM, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1384-1391

[6]

Colinge J.-P., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P817, DOI 10.1109/IEDM.1989.74178

[7] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J].

COLINGE, JP .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) :244-246

[8]

GROTJOHN T, 1984, IEEE T ELECTRO DEVIC, V31

[9] NEW STRUCTURAL APPROACH FOR REDUCING PUNCHTHROUGH CURRENT IN DEEP-SUBMICROMETER MOSFETS AND EXTENDING MOSFET SCALING [J].

HARELAND, SA ;

TASCH, AF ;

MAZIAR, CM .

ELECTRONICS LETTERS, 1993, 29 (21) :1894-1896

[10]

HOSACK HH, 1990, SIMOX SILICON ON INS, P61