LOW-VOLTAGE TRIODE SPUTTERING WITH A CONFINED PLASMA .5. APPLICATION TO BACKSPUTTER DEFINITION

被引：16

作者：

TISONE, TC ^{[1
]}

CRUZAN, PD ^{[1
]}

机构：

[1] BELL TEL LABS INC, ALLENTOWN, PA 18103 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 03期

关键词：

Compendex;

D O I：

10.1116/1.568646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

METALS AND ALLOYS

引用

页码：677 / 688

页数：12

共 37 条

[21] SPUTTER-ETCHING OF HETEROGENEOUS SURFACES [J].

MAISSEL, LI ;

STANDLEY, CL ;

GREGOR, LV .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1972, 16 (01) :67-&

[22] LOW-ENERGY ION-BOMBARDMENT OF SILICON DIOXIDE FILMS ON SILICON [J].

MCCAUGHAN, DV ;

MURPHY, VT .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2008-2017

[23] COST-SIZE OPTIMA OF MONOLITHIC INTEGRATED CIRCUITS [J].

MURPHY, BT .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1537-&

[24] LOW-VOLTAGE TRIODE SPUTTERING AND BACKSPUTTERING WITH A CONFINED PLASMA .4. HEAT-TRANSFER CHARACTERISTICS [J].

NEVIS, BE ;

TISONE, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :1177-1185

[25] EQUILIBRIUM TOPOGRAPHY OF SPUTTERED AMORPHOUS SOLIDS [J].

NOBES, MJ ;

COLLIGON, JS ;

CARTER, G .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (08) :730-&

[26]

SCHMIDT P, 1971, J VAC SCI TECHNOL, V8, P522

[27] MICROTOPOGRAPHY OF SURFACES ERODED BY ION-BOMBARDMENT [J].

STEWART, ADG ;

THOMPSON, MW .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (01) :56-&

[28] INTERNAL STRESSES AND RESISTIVITY OF LOW-VOLTAGE SPUTTERED TUNGSTEN FILMS [J].

SUN, RC ;

TISONE, TC ;

CRUZAN, PD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1009-1016

[29] ORIGIN OF INTERNAL STRESS IN LOW-VOLTAGE SPUTTERED TUNGSTEN FILMS [J].

SUN, RC ;

TISONE, TC ;

CRUZAN, PD .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :112-117

[30] LOW-VOLTAGE TRIODE SPUTTERING WITH A CONFINED PLASMA .1. GEOMETRIC ASPECTS OF DEPOSITION [J].

TISONE, TC ;

BINDELL, JB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (02) :519-527

← 1 2 3 4 →