PHOTOCONDUCTIVITY AND DARK CONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON

被引：46

作者：

BEYER, W ^{[1
]}

HOHEISEL, B ^{[1
]}

机构：

[1] UNIV MARBURG, FACHBEREICH PHYS, D-3550 MARBURG, FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 47卷 / 07期

关键词：

D O I：

10.1016/0038-1098(83)90502-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：573 / 576

页数：4

共 27 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712

[2] HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS-SILICON FILMS [J].

BEYER, W ;

WAGNER, H .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :783-786

[3] EFFECT OF BORON-DOPING ON THE HYDROGEN EVOLUTION FROM A-SI-H FILMS [J].

BEYER, W ;

WAGNER, H ;

MELL, H .

SOLID STATE COMMUNICATIONS, 1981, 39 (02) :375-379

[4] INFLUENCE OF BORON DOPING ON THE TRANSPORT-PROPERTIES OF A-SI-H FILMS [J].

BEYER, W ;

MELL, H .

SOLID STATE COMMUNICATIONS, 1981, 38 (10) :891-894

[5] DETERMINATION OF THE HYDROGEN DIFFUSION-COEFFICIENT IN HYDROGENATED AMORPHOUS-SILICON FROM HYDROGEN EFFUSION EXPERIMENTS [J].

BEYER, W ;

WAGNER, H .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8745-8750

[6] TRANSPORT-PROPERTIES OF COMPENSATED A-SI FILMS [J].

BEYER, W ;

MELL, H ;

OVERHOF, H .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :103-106

[7]

BEYER WF, UNPUB

[8] DEPENDENCE OF HYDROGEN EVOLUTION FROM A-SI-H ON BORON DOPING AND SUBSTRATE POTENTIAL [J].

CHEN, KJ ;

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :205-214

[9] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].

CHITTICK, RC ;

ALEXANDE.JH ;

STERLING, HF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :77-&

[10] CHEMISTRY OF SILICON AND GERMANIUMS .16. METHOD FOR SYNTHESIS OF HIGHER SILANES [J].

FEHER, F ;

SCHINKIT.D ;

SCHAAF, J .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1971, 383 (03) :303-&

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