EFFECTS OF EXTERNAL STRESSES ON THE LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON

Thermal oxidation of silicon was conducted under the application of external compressive or tensile stress at relatively low oxidation temperature. The effect of external stress appeared in different ways depending on the oxidation temperature. While the stress effect of oxidation at 800-degrees-C was well interpreted with the linear-parabolic oxidation model (L-P model), that at a temperature lower than 700-degrees-C contradicted the L-P model and strongly suggested the existence of an oxidation reaction of interstitial silicon atoms in the oxide.