AN ENTROPY BARRIER AGAINST VACANCY INTERSTITIAL RECOMBINATION IN SILICON

被引：46

作者：

GOSELE, U ^{[1
]}

FRANK, W ^{[1
]}

SEEGER, A ^{[1
]}

机构：

[1] UNIV STUTTGART,INST THEORET & ANGEW PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 45卷 / 01期

关键词：

D O I：

10.1016/0038-1098(83)90878-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：31 / 33

页数：3

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