LPE GROWTH OF HG1-XCDXTE USING CONVENTIONAL SLIDER BOAT AND EFFECTS OF ANNEALING ON PROPERTIES OF THE EPILAYERS

被引:17
作者
NAGAHAMA, K
OHKATA, R
NISHITANI, K
MUROTANI, T
机构
关键词
D O I
10.1007/BF02659836
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:67 / 80
页数:14
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共 17 条
[1]   1.33-MUM HGCDTE-CDTE PHOTO-DIODES [J].
CHU, M ;
SHIN, SH ;
LAW, HD ;
CHEUNG, DT .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :318-320
[2]   EFFECTS OF ANNEALING ON HG0.79CD0.21 TE EPILAYERS [J].
CHU, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5876-5879
[3]   LIQUID-PHASE EPITAXIAL-GROWTH OF CDTE-HG1-XCDXTE MULTILAYERS (0.3 LESS-THAN 0.5) [J].
CHU, M ;
WANG, CC .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2255-2257
[4]   POLYMORPHISM AND POLYETHISM IN THE NEOTROPICAL ANT CEPHALOTES-ATRATUS (L) [J].
CORN, ML .
INSECTES SOCIAUX, 1980, 27 (01) :29-42
[5]   CDXHG1-XTE N-TYPE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FAURIE, JP ;
MILLION, A .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :264-266
[6]   SLIDER LPE OF HG1-XCDXTE USING MERCURY PRESSURE CONTROLLED GROWTH SOLUTIONS [J].
HARMAN, TC .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :1069-1084
[8]   CHARGE-COUPLED-DEVICES IN EPITAXIAL HGCDTE-CDTE HETEROSTRUCTURE [J].
KIM, ME ;
TAUR, Y ;
SHIN, SH ;
BOSTRUP, G ;
KIM, JC ;
CHEUNG, DT .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :336-338
[9]   PERFORMANCE OF PV HGCDTE ARRAYS FOR 1-14-MU-M APPLICATIONS [J].
LANIR, M ;
RILEY, KJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :274-279
[10]   VAPOR-PHASE EPITAXY OF CDXHG1-XTE USING ORGANOMETALLICS [J].
MULLIN, JB ;
IRVINE, SJC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (09) :L149-L151