DEEP-LEVEL TRANSIENT SPECTROSCOPY CHARACTERIZATION OF SILICON-SILICON INTERFACES

被引：5

作者：

STIEVENARD, D ^{[1
]}

WALLART, X ^{[1
]}

MATHIOT, D ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.347534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the capacitance-voltage technique and mainly deep-level transient spectroscopy (DLTS), we studied silicon-silicon epitaxial layer structures grown by the limited reaction process using silane diluted in hydrogen. We develop a simple but original model to interpret the DLTS data. The use of the two techniques allows the determination of the physical parameters of the structure, i.e., the doping level, the thickness of the layers, and the density and capture cross section of the states localized at the different interfaces of the structure.

引用

页码：7640 / 7644

页数：5

共 24 条

[1]

BOURGOIN JC, 1983, POINT DEFECTS SEMICO, V2, P165

[2] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J].