THE CAPACITANCE OF RF SPUTTERED HYDROGENATED AMORPHOUS-SILICON, SCHOTTKY-BARRIER DIODES

被引：12

作者：

FERNANDEZCANQUE, HL ^{[1
]}

ALLISON, J ^{[1
]}

THOMPSON, MJ ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.331968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7025 / 7033

页数：9

共 18 条

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[2]

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