A KINETICS STUDY OF THE ATMOSPHERIC-PRESSURE CVD REACTION OF SILANE AND NITROUS-OXIDE

被引：25

作者：

CHAPPLESOKOL, JD

GIUNTA, CJ

GORDON, RG

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 10期

关键词：

D O I：

10.1149/1.2096390

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2993 / 3003

页数：11

相关论文

共 41 条

[1] ABSOLUTE RATE CONSTANTS FOR REACTIONS OF O(P-3) ATOMS AND OH RADICALS WITH SIH4 OVER TEMPERATURE-RANGE OF 297-438-DEGREES-K
ATKINSON, R
PITTS, JN
[J]. INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 1978, 10 (11) : 1151 - 1160
[2] BAULCH DL, 1973, EVALUATED KINETIC DA, V2, P69
[3] BORISOV AA, 1977, KINET CATAL+, V18, P256
[4] CHAPPLESOKOL JD, 1988, THESIS HARVARD U CAM, pCH2
[5] DUAL ELECTRON INJECTOR STRUCTURE
DIMARIA, DJ
DONG, DW
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 61 - 64
[6] ADSORPTION-KINETICS OF SIH4, SI2H6 AND SI3H8 ON THE SI(111)-(7X7) SURFACE
GATES, SM
[J]. SURFACE SCIENCE, 1988, 195 (1-2) : 307 - 329
[7] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992
[8] OBSERVATION OF AMORPHOUS-SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMS
HARTSTEIN, A
TSANG, JC
DIMARIA, DJ
DONG, DW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 836 - 837
[9] ATTENUATED TOTAL REFLECTANCE STUDY OF SILICON-RICH SILICON DIOXIDE FILMS
HARTSTEIN, A
DIMARIA, DJ
DONG, DW
KUCZA, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3860 - 3862
[10] SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .2. OXYGEN-CONTENT
HITCHMAN, ML
WIDMER, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) : 501 - 509

← 1 2 3 4 5 →