THE SPECIFIC CONTACT RESISTANCE OF OHMIC CONTACTS TO HGTE/HG1-XCDXTE HETEROSTRUCTURES

被引：6

作者：

LEECH, PW

机构：

[1] Telecom Australia Research Laboratories, Clayton

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 02期

关键词：

D O I：

10.1063/1.346733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The specific contact resistance (ρc) of Ohmic contacts to HgTe/Hg0.4Cd0.6Te heterostructures has been measured using a transmission line model. The lowest measured values of ρc (1.7×10-3 Ω cm2) corresponded to the In/HgTe/Hg 0.4Cd0.6Te and Sn/HgTe/Hg0.4Cd 0.6Te systems; while within the range of the other metal contacts examined (Ag, Al, Au, Cr, Cu, Ni, Pt, and Ti), ρc was independent of HgTe/Hg0.4Cd0.6Te interface reactivity. Comparative measurements have also been made with metal junctions formed to Hg 0.4Cd0.6Te and HgTe.

引用

收藏

页码：907 / 909

页数：3

相关论文

共 12 条

[1] OVERLAYER INTERACTIONS WITH (HGCD)TE [J].

DAVIS, GD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1939-1945

[2] SIMS ANALYSIS OF EVAPORATED INDIUM CONTACTS ON (HGCD)TE [J].

DEMANET, CM ;

STRYDOM, HJ ;

BASSON, JH ;

BOTHA, AP ;

STANDER, CM .

APPLIED SURFACE SCIENCE, 1986, 25 (03) :279-287

[3] SCHOTTKY BARRIERS AND INTERFACE REACTIONS ON CHEMICALLY ETCHED N-CDTE SINGLE-CRYSTALS [J].

DHARMADASA, IM ;

MCLEAN, AB ;

PATTERSON, MH ;

WILLIAMS, RH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (07) :404-412

[4] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE [J].

JOHNSON, ES ;

SCHMIT, JL .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) :25-38

[5] A SELECTIVE ETCHANT FOR HG1-XCDXTE CDTE AND HGTE ON GAAS [J].

LEECH, PW ;

GWYNN, PJ ;

KIBEL, MH .

APPLIED SURFACE SCIENCE, 1989, 37 (03) :291-298

[6] HG0.4CD0.6TE 1.55-MU-M AVALANCHE PHOTODIODE NOISE-ANALYSIS IN THE VICINITY OF RESONANT IMPACT IONIZATION CONNECTED WITH THE SPIN-ORBIT SPLIT-OFF BAND [J].

ORSAL, B ;

ALABEDRA, R ;

VALENZA, M ;

LECOY, GP ;

MESLAGE, J ;

BOISROBERT, CY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) :101-107

[7]

PAWLIKOWSKI JM, 1976, ACTA PHYS POL A, V40, P139

[8] SCHOTTKY-BARRIER PHOTO-DIODES IN P HG1-XCDXTE [J].

POLLA, DL ;

SOOD, AK .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4908-4912

[9] BARRIER HEIGHT REDUCTION FOR GRADED N-N HETEROJUNCTIONS [J].

RAYMOND, RM ;

HAYES, RE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1359-1360

[10]

REEVES GK, 1982, IEEE ELECTRON DEVICE, V3, P111