SILICON CHEMICAL VAPOR-DEPOSITION ONE-STEP AT A TIME - FUNDAMENTAL-STUDIES OF SILICON HYDRIDE CHEMISTRY

被引：228

作者：

JASINSKI, JM

GATES, SM

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights

来源：

ACCOUNTS OF CHEMICAL RESEARCH | 1991年 / 24卷 / 01期

关键词：

D O I：

10.1021/ar00001a002

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：9 / 15

页数：7

共 109 条

[91] CORRECTION [J].

ROENIGK, KF .

JOURNAL OF PHYSICAL CHEMISTRY, 1988, 92 (14) :4254-4254

[92] RICE-RAMSPERGER-KASSEL-MARCUS THEORETICAL PREDICTION OF HIGH-PRESSURE ARRHENIUS PARAMETERS BY NONLINEAR-REGRESSION - APPLICATION TO SILANE AND DISILANE DECOMPOSITION [J].

ROENIGK, KF ;

JENSEN, KF ;

CARR, RW .

JOURNAL OF PHYSICAL CHEMISTRY, 1987, 91 (22) :5732-5739

[93] GAS-PHASE CHEMISTRY IN THE PROCESSING OF MATERIALS FOR THE SEMICONDUCTOR INDUSTRY [J].

RYAN, KR ;

PLUMB, IC .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (02) :153-200

[94] PRODUCTION MECHANISM AND REACTIVITY OF THE SIH RADICAL IN A SILANE PLASMA [J].

SCHMITT, JPM ;

GRESSIER, P ;

KRISHNAN, M ;

DEROSNY, G ;

PERRIN, J .

CHEMICAL PHYSICS, 1984, 84 (02) :281-293

[95] THE ROLE OF SURFACE-REACTIONS IN MONOSILANE PYROLYSIS [J].

SCOTT, BA ;

ESTES, RD ;

JASINSKI, JM .

JOURNAL OF CHEMICAL PHYSICS, 1988, 89 (04) :2544-2549

[96] HYDROGEN DESORPTION FROM THE MONOHYDRIDE PHASE ON SI(100) [J].

SINNIAH, K ;

SHERMAN, MG ;

LEWIS, LB ;

WEINBERG, WH ;

YATES, JT ;

JANDA, KC .

JOURNAL OF CHEMICAL PHYSICS, 1990, 92 (09) :5700-5711

[97] KINETICS OF THE REACTIONS OF SIH3 WITH O-2 AND N2O [J].

SLAGLE, IR ;

BERNHARDT, JR ;

GUTMAN, D .

CHEMICAL PHYSICS LETTERS, 1988, 149 (02) :180-184

[98] INITIAL STEPS IN THE PHOTOCHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON [J].

STAFAST, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (02) :93-102

[99] RATE-CONSTANT MEASUREMENTS FOR REACTIONS OF SIH3 WITH O-2, NO AND NO2 USING TIME-RESOLVED INFRARED DIODE-LASER SPECTROSCOPY [J].

SUGAWARA, K ;

NAKANAGA, T ;

TAKEO, H ;

MATSUMURA, C .

CHEMICAL PHYSICS LETTERS, 1989, 157 (04) :309-314

[100] ABINITIO STUDIES ON THE SILICON COMPOUND - ON THE ELECTRONIC-STRUCTURE OF DISILENE RECONSIDERED [J].

TERAMAE, H .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1987, 109 (14) :4140-4142

← 2 3 4 5 6 7 8 9 10 11 →