FEDSS - A 2D SEMICONDUCTOR FABRICATION PROCESS SIMULATOR

被引:20
作者
BORUCKI, L
HANSEN, HH
VARAHRAMYAN, K
机构
[1] IBM, Advanced Mathematics &, Engineering Analysis Dep, Essex, Junction, VT, USA, IBM, Advanced Mathematics & Engineering Analysis Dep, Essex Junction, VT, USA
关键词
D O I
10.1147/rd.293.0263
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
SEMICONDUCTOR DEVICE MANUFACTURE
引用
收藏
页码:263 / 276
页数:14
相关论文
共 24 条
[11]   REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].
GROVE, AS ;
SAH, CT ;
LEISTIKO, O .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&
[12]  
HANSEN HH, 1982, 1ST INT S VER LARG S
[13]   CONCENTRATION PROFILES OF BORON IMPLANTATIONS IN AMORPHOUS AND POLYCRYSTALLINE SILICON [J].
HOFKER, WK ;
OOSTHOEK, DP ;
KOEMAN, NJ ;
DEGREFTE, HAM .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (04) :223-231
[14]   INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J].
HU, SM ;
SCHMIDT, S .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4272-+
[15]  
INOUE K, 1979, JPN J APPL PHYS, V18, pA367
[16]   DESCRIPTION OF ARSENIC AND BORON PROFILES IMPLANTED IN SIO2,SI3N4 AND SI USING PEARSON DISTRIBUTIONS WITH 4 MOMENTS [J].
JAHNEL, F ;
RYSSEL, H ;
PRINKE, G ;
HOFFMANN, K ;
MULLER, K ;
BIERSACK, J ;
HENKELMANN, R .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :223-229
[17]   OXIDATION ENHANCED AND CONCENTRATION DEPENDENT DIFFUSIONS OF DOPANTS IN SILICON [J].
MATSUMOTO, S ;
ISHIKAWA, Y ;
NIIMI, T .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5049-5054
[18]  
PRICE C, 1982, INTEGRATED CIRCUITS
[19]   COMPUTER-SIMULATION IN SILICON EPITAXY [J].
REIF, R ;
DUTTON, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) :909-918
[20]   DISTRIBUTION OF IMPLANTED IONS UNDER ARBITRARILY SHAPED MASK EDGES [J].
RUNGE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (02) :595-599