BACKSCATTERING ANALYSIS OF COMPOSITION OF SILICON-NITRIDE FILMS DEPOSITED BY RF REACTIVE SPUTTERING

被引：37

作者：

MOGAB, CJ ^{[1
]}

LUGUJJO, E ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.322831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1302 / 1309

页数：8

共 22 条

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