NEW ELECTRICAL CHARACTERIZATION OF THE METAL-SEMICONDUCTOR INTERFACE IN GAAS SCHOTTKY JUNCTIONS

被引：2

作者：

HORVATH, ZJ

机构：

来源：

ACTA PHYSICA POLONICA A | 1991年 / 79卷 / 2-3期

关键词：

D O I：

10.12693/APhysPolA.79.167

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The new possibilities of the electrical characterization of the metal-semiconductor interface in Schottky junctions are briefly outlined and demonstrated by using an example of experimental results taken from the literature. The interface parameters obtained for GaAs Schottky junctions with different metallizations are summarized.

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页码：167 / 170

页数：4

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