SI PARTICLE DENSITY REDUCTION IN SI MOLECULAR-BEAM EPITAXY USING A DEFLECTION ELECTRODE

被引：5

作者：

TATSUMI, T

HIRAYAMA, H

AIZAKI, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.100900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：629 / 631

页数：3

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