TRANSIENT ANNEALING OF SEMICONDUCTORS BY LASER, ELECTRON-BEAM AND RADIANT HEATING TECHNIQUES

被引：48

作者：

CULLIS, AG

机构：

来源：

REPORTS ON PROGRESS IN PHYSICS | 1985年 / 48卷 / 08期

关键词：

D O I：

10.1088/0034-4885/48/8/002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1155 / 1233

页数：79

共 545 条

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