TRANSIENT ANNEALING OF SEMICONDUCTORS BY LASER, ELECTRON-BEAM AND RADIANT HEATING TECHNIQUES

被引：48

作者：

CULLIS, AG

机构：

来源：

REPORTS ON PROGRESS IN PHYSICS | 1985年 / 48卷 / 08期

关键词：

D O I：

10.1088/0034-4885/48/8/002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1155 / 1233

页数：79

共 545 条

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[127] AMORPHIZATION OF GERMANIUM, GALLIUM-PHOSPHIDE, AND GALLIUM-ARSENIDE BY LASER QUENCHING FROM THE MELT [J].

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[128] TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS [J].

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[129] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J].

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[130] ULTRARAPID CRYSTAL-GROWTH AND IMPURITY SEGREGATION IN AMORPHOUS-SILICON ANNEALED WITH SHORT Q-SWITCHED LASER-PULSES [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (11) :998-1000

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